(China (Mainland))
Product Summary
The 2MI50F-050 is a N-channel silicon power MOS-FET. The applications of the device include inverters, UPS, AC servo motors and high frequency poewr supplies.
Parametrics
2MI50F-050 absolute maximum ratings: (1)drain-source voltage, VDSS: 500V; (2)contimuous drain current, duty=66%, ID: 50A; (3)pulsed drain current, ID(plus): 150A; (4)continuous reverse drain current, IDR: 50A; (5)gate-source peak voltage, VGSS: ±20V; (6)max power dissipation, PD: 400W; (7)operating temperature range, Tch: 150℃; (8)storage temperature range, Tstg: -40 to 125℃; (9)isolation test voltage, AC 1min, Viso: 2500V.
Features
2MI50F-050 features: (1)low on-resistance; (2)high current; (3)insulated to emements and metal base; (4)separated two-elements; (5)include fast recovery diode.
Diagrams
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 2MI50F-050 |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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2MI50F-050 |
Other |
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Data Sheet |
Negotiable |
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