(China (Mainland))
Product Summary
The FF300R12KE3 is a IGBT-Module.
Parametrics
FF300R12KE3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V when Tvi=25℃; (2)repetitive peak collector current, ICRM: 600A when tp=1ms, Tc=80℃; (3)total power dissipation, Ptot: 1450W when TC=25℃, Tvi=150℃; (4)gate-emitter peak voltage, VGES: ±20V.
Features
FF300R12KE3 features: (1)gate threshold voltage, VGE: 5.0 TP 6.5V, 5.8V typ; (2)gate charge, QG: 2.80μC; (3)internal gate resistor, RGint: 2.5Ω.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FF300R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 300A DUAL |
Data Sheet |
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FF300R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 480A |
Data Sheet |
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