(China (Mainland))
Product Summary
The BFQ3401 is an NPN 4 GHz wideband transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. The BFQ3401 is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The BFQ3401 also features high output voltage capabilities.
Parametrics
BFQ3401 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 25 V; (2)VCEO, collector-emitter voltage open base: 18 V; (3)VEBO, emitter-base voltage open collector: 2 V; (4)IC, DC collector current: 150 mA; (5)Ptot, total power dissipation up to Tc = 160 ℃: 2.7 W; (6)Tstg, storage temperature: -65 to 150 ℃; (7)Tj, junction temperature: 200 ℃.
Diagrams
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 BFQ31ATA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) NPN RF |
Data Sheet |
Negotiable |
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BFQ31TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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BFQ34 |
Other |
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Data Sheet |
Negotiable |
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BFQ34/1 |
TriQuint Semiconductor |
Transistors RF MOSFET Small Signal RF Bipolar Module |
Data Sheet |
Negotiable |
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BFQ31TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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BFQ31A |
Other |
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Data Sheet |
Negotiable |
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