Product Summary

The BFQ3401 is an NPN 4 GHz wideband transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. The BFQ3401 is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The BFQ3401 also features high output voltage capabilities.

Parametrics

BFQ3401 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 25 V; (2)VCEO, collector-emitter voltage open base: 18 V; (3)VEBO, emitter-base voltage open collector: 2 V; (4)IC, DC collector current: 150 mA; (5)Ptot, total power dissipation up to Tc = 160 ℃: 2.7 W; (6)Tstg, storage temperature: -65 to 150 ℃; (7)Tj, junction temperature: 200 ℃.

Diagrams

BFQ3401 circuit diagram

BFQ31A
BFQ31A

Other


Data Sheet

Negotiable 
BFQ31ATA
BFQ31ATA

Diodes Inc. / Zetex

Transistors Bipolar (BJT) NPN RF

Data Sheet

Negotiable 
BFQ31ATC
BFQ31ATC

Diodes Inc. / Zetex

Transistors Bipolar (BJT) NPN RF

Data Sheet

Negotiable 
BFQ31TA
BFQ31TA

Diodes Inc. / Zetex

Transistors Bipolar (BJT) -

Data Sheet

Negotiable 
BFQ31TC
BFQ31TC

Diodes Inc. / Zetex

Transistors Bipolar (BJT) -

Data Sheet

Negotiable 
BFQ34
BFQ34

Other


Data Sheet

Negotiable