(China (Mainland))
Product Summary
The MG200H1AL2 is a semiconductor.
Parametrics
MG200H1AL2 absolute maximum ratings: (1)collector-base voltage: 600 V; (2)collector-emitter voltage: 600 V; (3)collector-emitter sustaining voltage: 550 V; (4)emitter-base voltage: 6 V; (5)collector current: 200 A; (6)base current: 8 A; (7)collector power dissipation: 800 W; (8)junction temperature: 150 ; (9)isolation voltage: 2500 V; (10)screw torque: 20/30/30 kg·cm.
Features
MG200H1AL2 electrical charactristics: (1)collector cut-off current: 2.0 mA max at VCB1=600V, IE=0; (2)emitter cut-off current: 400 mA at VEB1=6V, IC=0; (3)collector-emitter sustaining voltage: 550 V min at IC=0.5A, L=40mH; (4)DC current gain: 80 at VCE=5V, IC=200A; (5)collector-emitter saturation voltage: 2.0 V at IC=200A, IB1=6A; (6)base-emitter saturation voltage: 2.7 V at IC=200A, IB1=6A; (7)emitter-collector voltage: 1.5 V at IE=200 A, IB1=0.
Diagrams
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 MG2000 |
Other |
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Data Sheet |
Negotiable |
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MG2001 |
Other |
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Data Sheet |
Negotiable |
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MG2002 |
Other |
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Data Sheet |
Negotiable |
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MG200J6ES60 |
Other |
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Data Sheet |
Negotiable |
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MG200J6ES61 |
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IGBT MOD CMPCT 600V 200A |
Data Sheet |
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MG200Q2YS60A |
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IGBT MOD CMPCT DUAL 1200V 200A |
Data Sheet |
Negotiable |
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