(China (Mainland))
Product Summary
The MG1200V1US51 is a TOSHIBA GTR module, which is a silicon N.channel IGBT. The applications of the MG1200V1US51 include high power switching applications, motor control applications.
Parametrics
MG1200V1US51 absolute maximum ratings: (1)Collector.Emitter Voltage: 1700 V; (2)Gate.Emitter Voltage: 20 V; (3)Collector Current: 2400 A; (4)Forward Current: 2400 A; (5)Collector Power Dissipation (Tc = 25℃): 5560 W; (6)Junction Temperature: -20~125 ℃; (7)Storage Temperature Range: -40~125 ℃; (8)Isolation Voltage: 5400 (AC 1min) V; (9)Screw Torque: 4 N·m.
Features
MG1200V1US51 features: (1)High Input Impedance; (2)Enhancement Mode; (3)Electrodes are isolated from case.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 MG1200V1US51 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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MG1200 |
Other |
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Data Sheet |
Negotiable |
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MG1200E |
Other |
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Data Sheet |
Negotiable |
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MG1200FXF1US51 |
Other |
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Data Sheet |
Negotiable |
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MG1200V1US51 |
Other |
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Data Sheet |
Negotiable |
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MG1231A |
Other |
|
Data Sheet |
Negotiable |
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MG1231C |
Other |
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Data Sheet |
Negotiable |
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