Product Summary

The CM50TF-12H is a Mitsubishi IGBT module. The CM50TF-12H consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Parametrics

CM50TF-12H absolute maximum ratings: (1)Junction Temperature:–40℃ to 150℃; (2)Storage Temperature:–40℃ to 125℃; (3)Collector-Emitter Voltage (G-E SHORT):600 Volts; (4)Gate-Emitter Voltage (C-E SHORT):±20 Volts; (5)Collector Current (TC = 25℃):50 Amperes; (6)Peak Collector Current:100* Amperes; (7)Emitter Current** (TC = 25℃):50 Amperes; (8)Peak Emitter Current:100* Amperes; (9)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃):250 Watts; (10)Weight:390 Grams; (11)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.):2500 Vrms.

Features

CM50TF-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.

Diagrams

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CM50TF-12H
CM50TF-12H


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