Product Summary
The BSM75GB120DLC is an IGBT-Module.
Parametrics
BSM75GB120DLC absolute maximum ratings: (1)collector-emitter voltage: 1200 V; (2)DC-collector current: 170A; (3)repetitive peak collector current: 150 A; (4)total power dissipation: 690W; (5)gate-emitter peak voltage: +/- 20V V; (6)DC forward current: 75A; (7)repetitive peak forw. current: 150 A; (8)I2t - value, Diode: 1.19 kA2s; (9)insulation test voltage: 2.5 kV.
Features
BSM75GB120DLC features: (1)collector-emitter saturation voltage: 2.4 to 2.9V; (2)gate threshold voltage: 4.5 to 6.5V; (3)gate charge: 0.8 μC; (4)input capacitance: 5.1nF; (5)reverse transfer capacitance: 0.33 nF; (6)collector-emitter cut-off current: 300μA; (7)gate-emitter leakage current: 400nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM75GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
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IGBT Modules 1200V 75A CHOPPER |
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BSM75GAR120DN2 |
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BSM75GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
Data Sheet |
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BSM75GB120DN2 |
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BSM75GB120DN2_E3223c-Se |
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