Product Summary

The BLF647 is a kind of Silicon N-channel enhancement mode lateral D-MOS push-pull transistor. It is available in flanged balanced LDMOST ceramic package with 2 mounting holes and 4 leads. The common source is connected to the mounting flange. It is designed for communication transmitter applications in the HF to 800 MHz frequency range.

The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. In addition, it is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.

Parametrics

Then is about the maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)VGS, gate-source voltage: ±15 V; (3)ID, drain current (DC): 18 A; (4)Ptot, total power dissipation: 290 W when Tamb≦25℃; (5)Tstg, storage temperature: -65 to +150℃; (6)Tj, junction temperature: 200℃.

Features

The following is about the features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Source on underside eliminates DC isolators, reducing; (5)common mode inductance; (6)Designed for broadband operation (HF to 800 MHz); (7)Internal input damping for excellent stability over the; (8)whole frequency range.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF647
BLF647
Other

Data Sheet
Negotiable 
BLF647,112
BLF647,112
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 150W UHF
Data Sheet
0-1: $96.00
1-25: $91.09
BLF647A
BLF647A
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
Negotiable 
BLF647A,112
BLF647A,112
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
0-46: $94.83