(China (Mainland))
Product Summary
The SQD200A60 is a Darlington power transistor module which contaions a high speed, high power Darlington transistor. The SQD200A60 has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.
Parametrics
SQD200A60 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 600 V; (2)VCEX, Collector-Emitter Voltage: 600 V when VBE=2V; (3)VEBO, Emitter-Base Voltage: 10 V; (4)IC, Collector Current: 400A when pw≤ms; (5)-IC, Reverse Collector Current: 200 A; (6)IB, Base Current: 12 A; (7)PT, Total power dissipation: 1250 W when TC=25℃; (8)Tj, Junction Temperature: -40 to +150℃; (9)Tstg ,Storage Temperature: -40 to +125℃; (10)VISO, Isolation Voltage: 2500 V when A.C.1minute.
Features
SQD200A60 features: (1)IC=200A, VCEX=400/600V; (2)Low saturation voltage for higher efficiency; (3)High DC current gain hFE; (4)Isolated mounting base; (5)VEBO 10V for faster switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SQD200A60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SQD200A40 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SQD200A60 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
SQD23N06-31L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
SQD23N06-31L-GE3 |
Vishay/Siliconix |
MOSFET 60V 23A 100W 31mohm @ 10V |
Data Sheet |
|
|
||||||||||||
|
SQD25N06-22L-GE3 |
Vishay/Siliconix |
MOSFET 60V 25A 62W N-Ch Automotive |
Data Sheet |
|
|
||||||||||||
|
SQD25N06-35L-GE3 |
Vishay/Siliconix |
MOSFET 60V 25A 50W 35mohm @ 10V |
Data Sheet |
|
|
||||||||||||
