(China (Mainland))
Product Summary
The SKM150GB123D is a IGBT module. The device is suitable for switching.
Parametrics
SKM150GB123D absolute maximum ratings: (1)IGBT, VCES: 1200V; IC: 150A when TC=25℃, 11A when TC=80℃; ICRM: 200A when tp=1ms; TVj, (Tstg): -40 to 150(125)℃ when Toperation≤Tstg; Visol: 2500V when AC, 1min; (2)inverse diode, IF: 150(100)A when TC=25(80)℃; IFRM: 200A when tp=1ms; IFSM: 1100A when tp=10ms; sin, Tj=150℃; (3)freewheeling diode, IF: 200(135)A when TC=25(80)℃; IFRM: 300A when tp=1ms; IFSM: 1450A when tp=10ms; sin, Tj=150℃.
Features
SKM150GB123D features: (1)MOS input (voltage controlled); (2)N channel, Homogeneous Si; (3)low inductance case; (4)very low tail current with low temperature dependence; (5)high short circuit capability, self limiting to 6Icnom; (6)latch-up free; (7)fast and soft inverse CAL diodes; (8)isolated copper baseplate using DCB direct copper bonding; (9)large clearance (12mm) and creepage distances (20mm).
Diagrams
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