(China (Mainland))
Product Summary
The QM15TD-H is a MITSUBISHI transistor module which is used for medium power switching.
Parametrics
QM15TD-H absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Collector-emitter voltage: 600 V; (3)Collector-base voltage: 600 V; (4)Emitter-base voltage: 7 V; (5)Collector current: 15 A; (6)Collector reverse current: 15 A; (7)Collector dissipation: 100 W; (8)Base current: 1 A; (9)Surge collector reverse current (forward diode current): 150 A; (10)Junction temperature: -40 to + 150 ℃; (11)Storage temperature: -40 to + 150 ℃; (12)Isolation voltage: 2000 V; (13)Mounting torque: 15 to 20 kg·cm; (14)Weight: 90 g.
Features
QM15TD-H features: (1)IC Collector current: 15A; (2)VCEX Collector-emitter voltage: 600V; (3)hFE DC current gain: 75; (4)Insulated Type; (5)UL Recognized: Yellow Card No. E80276 (N), File No. E80271.
Diagrams
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QM15TD-HB |
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