Product Summary

The MRF898 is a kind of NPN silicon RF power transistor. It is designed for 24 V UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850-960 MHz. It adopts Motorola advanced amplifier concept package. In addition, the silicon nitride is passivated and the circuit board photomaster is available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Parametrics

Absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 30 Vdc; (2)Collector–Base Voltage, VCBO: 55 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current — Continuous, IC: 10 Adc; (5)Total Device Dissipation @ TC = 25℃, PD: 175 W; (6)Storage Temperature Range, Tstg: -65 to +150℃; (7)Thermal Resistance, Junction to Case, RθJC: 1.0 ℃/W.

Features

Features: (1)Specified 24 Volt, 900 MHz Characteristics: Output Power = 60 Watts; Power Gain = 7.0 dB Min; Efficiency = 60% Min; (2)Double Input/Output Matched for Wideband Performance and Simplified External Matching; (3)Series Equivalent Large–Signal Characterization; (4)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration.

Diagrams

MRF837
MRF837
Other

Data Sheet
Negotiable 
MRF8372LF
MRF8372LF
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $1.62
1-10: $1.35
10-25: $1.22
25-50: $1.08
MRF8372LFR1
MRF8372LFR1
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable 
MRF8372LFR2
MRF8372LFR2
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable 
MRF838A
MRF838A
Other

Data Sheet
Negotiable 
MRF839F
MRF839F
Other

Data Sheet
Negotiable