Product Summary

The MRF898 is a kind of NPN silicon RF power transistor. It is designed for 24 V UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850-960 MHz. It adopts Motorola advanced amplifier concept package. In addition, the silicon nitride is passivated and the circuit board photomaster is available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Parametrics

Absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 30 Vdc; (2)Collector–Base Voltage, VCBO: 55 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current — Continuous, IC: 10 Adc; (5)Total Device Dissipation @ TC = 25℃, PD: 175 W; (6)Storage Temperature Range, Tstg: -65 to +150℃; (7)Thermal Resistance, Junction to Case, RθJC: 1.0 ℃/W.

Features

Features: (1)Specified 24 Volt, 900 MHz Characteristics: Output Power = 60 Watts; Power Gain = 7.0 dB Min; Efficiency = 60% Min; (2)Double Input/Output Matched for Wideband Performance and Simplified External Matching; (3)Series Equivalent Large–Signal Characterization; (4)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration.

Diagrams

MRF8372LF
MRF8372LF

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $1.62
1-10: $1.35
10-25: $1.22
25-50: $1.08
MRF8372LFR1
MRF8372LFR1

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable 
MRF891S
MRF891S

Other


Data Sheet

Negotiable 
MRF892
MRF892

Other


Data Sheet

Negotiable 
MRF894
MRF894

Other


Data Sheet

Negotiable 
MRF89XAM8A-I/RM
MRF89XAM8A-I/RM

Microchip Technology

RF Modules 868MHz Sub-GHz transceiver module

Data Sheet

0-1: $5.88
1-10: $5.10
10-25: $4.77
25-100: $4.39