(China (Mainland))
Product Summary
The MG100Q2YS1 is a silicon N channel IGBT. The applications of it include high power switching and motor control.
Parametrics
MG100Q2YS1 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:IC:100A, ICP:200A; (4)forward current:IF:100A, IFM:200A; (5)collector power dissipation:800W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.
Features
MG100Q2YS1 features: (1)high input impedance; (2)high speed:tf=1.0us(max.), trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=2.7V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.
Diagrams
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 MG1000E |
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MG1001 |
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MG1001E |
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MG1002E |
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MG1004 |
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MG1004E |
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Negotiable |
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