(China (Mainland))
Product Summary
The MBN1200D33A is a Silicon N-channel IGBT.
Parametrics
MBN1200D33A absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 3,300V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 1,200A; 1ms, ICp: 2,400A; (4)Forward Current, DC, IF: 1,200A; 1ms, IFM: 2,400A; (5)Collector Power Dissipation, Pc: 12,000W; (6)Junction Temperature, Tj: -40 ~ +125℃; (7)Storage Temperature, Tstg: -40 ~ +125℃; (8)Isolation Voltage, VISO: 5,400(AC 1 minute)VRMS; (9)Screw Torque, Terminals(M4/M8): 2/10N·m; Mounting(M6): 6N·m.
Features
MBN1200D33A features: (1)High thermal fatigue durability (delta Tc=70℃,N>20,000cycles); (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).
Diagrams
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 MBN1200D33A |
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Negotiable |
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MBN1.00SV |
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1" TIN COPPER TUBE SLEEVING 100' |
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MBN1.00SV50 |
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1" TIN COPPER TUBE SLEEVING 50' |
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MBN1200D33A |
Other |
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Data Sheet |
Negotiable |
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