Product Summary

The BSM150GB120DN2 is an IGBT Power Module.

Parametrics

BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GB120DN2
BSM150GB120DN2

Infineon Technologies

IGBT Modules 1200V 150A DUAL

Data Sheet

0-1: $96.31
1-10: $86.68
BSM150GB120DN2_E3166
BSM150GB120DN2_E3166

Infineon Technologies

IGBT Modules N-CH 1.2KV 210A

Data Sheet

0-5: $108.98
5-10: $98.08
BSM150GB120DN2F_E3256
BSM150GB120DN2F_E3256

Infineon Technologies

IGBT Modules IGBT 1200V 150A

Data Sheet

0-6: $97.80
6-10: $88.20
BSM150GB120DN2F
BSM150GB120DN2F

Infineon Technologies

IGBT Modules IGBT 1200V 150A

Data Sheet

0-6: $88.80
6-10: $79.80
BSM150GB120DN2E3166
BSM150GB120DN2E3166

Other


Data Sheet

Negotiable