(China (Mainland))
Product Summary
The BSM150GB120DN2 is an IGBT Power Module.
Parametrics
BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.
Features
BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSM150GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 150A DUAL |
Data Sheet |
|
|
||||||||
|
BSM150GB120DN2_E3166 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 210A |
Data Sheet |
|
|
||||||||
|
BSM150GB120DN2F_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
Data Sheet |
|
|
||||||||
|
BSM150GB120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
Data Sheet |
|
|
||||||||
|
BSM150GB120DN2E3166 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||
