(China (Mainland))
Product Summary
The FZ1200R16KF4 is an IGBT module.
Parametrics
FZ1200R16KF4 absolute maximum ratings: (1)Collector-emitter voltage: 1600V; (2)DC-collctor current: 1200A; (3)Repetitive peak collector current: 2400A; (4)Total power dissipation: 7800W; (5)Gate-emitter peak voltage: ±20V; (6)Insulation test voltage: 34kV.
Features
FZ1200R16KF4 characteristics: (1)Collctor-emitter saturation voltage:39V; (2)Gate threshold voltage: 65V; (3)Input capacity: 180nF; (4)Collector-emitter cut-off current: 8mA; (5)Gate leakage current: 400nA; (6)Gate leakage current: 400nA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FZ1200R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
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FZ1200R16KF4S1 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
Negotiable |
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