Product Summary
The MG75J2YS45 is a Silicon N Channel IGBT. The applications of MG75J2YS45 are High Power Switching, Motor Control.
Parametrics
MG75J2YS45 absolute maximum ratings: (1)Collector-emitter voltage :600 V ; (2)Gate-emitter voltage:±20 V ; (3)Collector power dissipation (Tc = 25±):390 W ; (4)Junction temperature :150℃; (5)Storage temperature range:-40℃ to 125℃; (6)Isolation voltage:2500V(AC 1 min.).
Features
MG75J2YS45 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed : tf = 0.30μs(Max) (IC = 75A) ,trr = 0.15μs(Max)(IF = 75A) ; (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 75A) .
Diagrams
MG750-1.00K-1% |
Caddock Electronics Inc |
RES 1K 1% HIGH VOLT AXIAl 7.5 |
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MG750-10.0M-1% |
Caddock |
Thick Film Resistors - Through Hole 10M ohm 1% |
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MG750-20M-1% |
Caddock |
Thick Film Resistors - Through Hole |
Data Sheet |
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MG750-402K-1% |
Caddock Electronics Inc |
RES 402K 1% HIGH VOLT AXIAL 7.5 |
Data Sheet |
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MG750-5.00K-1% |
Caddock |
Thick Film Resistors - Through Hole 5K ohm 1% |
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MG75P |
Other |
Data Sheet |
Negotiable |
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